2H-SiC films grown by laser chemical vapor deposition

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

Graphene epitaxy by chemical vapor deposition on SiC.

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) an...

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

................................................................................................. iii Sammanfattning ..................................................................................... iv Acknowledgement ................................................................................... v List of included publications ..............................................................

Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...

Structure and morphology of epitaxial PbZrO3 films grown by metalorganic chemical vapor deposition

PbZrO 3 ͑PZ͒ films of different thicknesses have been grown by metalorganic chemical vapor deposition on SrTiO 3 ͑STO͒ substrates. The structure of the films was determined by x-ray diffraction and transmission electron microscopy. At the deposition temperature, the growth is cube on cube and is therefore heteroepitaxial. During cool down, PZ goes through a phase transformation from paraelectric to...